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Phys. Rev. B 59, 10296–10301 (1999)

Short-range ordering in AlxGa1-xAs grown with metal-organic vapor-phase epitaxy

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A. J. Heinrich, M. Wenderoth*, K. J. Engel, T. C. G. Reusch, K. Sauthoff, and R. G. Ulbrich
4. Physikalisches Institut der Universität Göttingen, Göttingen, Germany

E. R. Weber
Department of Materials Science, University of California at Berkeley, Berkeley, California 92775

K. Uchida
Tsukuba National Laboratories, Tsukuba, Japan

Received 5 October 1998; published in the issue dated 15 April 1999

Atomically resolved, cross-sectional scanning tunneling microscopy was used to identify Al atoms in the surface layer of Al0.15Ga0.85As grown with metal-organic vapor-phase epitaxy. Characteristic fingerprints of individual and clusters of Al atoms were analyzed to identify surface-layer Al atoms resulting in atom maps of the Al positions. By quantitatively comparing the measured Al configuration with simulated images of a random Al incorporation, statistically significant deviations of the measured from a random Al distribution were found. These deviations are explained with a clear tendency of the Al atoms to form short-range ordered structures in the GaAs matrix. This ordering results in strings of Al atoms of a length of up to five Al atoms along low-indexed crystallographic directions.

© 1999 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.59.10296
DOI:
10.1103/PhysRevB.59.10296
PACS:
61.16.Ch, 61.50.Ks, 61.66.Dk, 68.55.-a

*Author to whom correspondence should be addressed. Electronic address: wendero@physik4.gwdg.de

 
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