Phys. Rev. B 59, 480–485 (1999)Nonlinear transport in tunnel magnetoresistance systemsReceived 13 July 1998; published in the issue dated 1 January 1999 The nonlinear electronic tunneling through ferromagnet (FM)/insulator (I)/FM single-barrier and FM/I/FM/I/FM double-barrier magnetic layered structures is studied using the Landauer-Büttiker scattering approach. For the single-barrier junctions, the resulting bias dependence of tunnel magnetoresistance is qualitatively in agreement with experimental observation. The absolute value of magnetoresistance is shown to be enhanced in the double-barrier systems. Under suitable conditions, large negative and positive magnetoresistance effects occur alternately with increasing bias voltage. These features make double-barrier resonant-tunnel structures more attractive magnetoresistance devices. © 1999 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.59.480
DOI:
10.1103/PhysRevB.59.480
PACS:
75.70.Pa, 73.40.Gk, 73.40.Cg
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