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APS » Journals » Phys. Rev. B » Volume 58 » Issue 4
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Phys. Rev. B 58, R1770–R1773 (1998)

Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots

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Yu. A. Pusep and G. Zanelatto
Universidade Federal de São Carlos, 13565-905 São Carlos, SP, Brazil

S. W. da Silva
Instituto de Fisica, Universidade de Brasilia, 70910-900, Brasilia, DF, Brazil

J. C. Galzerani
Universidade Federal de São Carlos, 13565-905 São Carlos, SP, Brazil

P. P. Gonzalez-Borrero
Instituto de Fisica de São Carlos, Universidade de São Paulo, 13560-970 São Carlos, SP, Brazil

A. I. Toropov
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia

P. Basmaji
Instituto de Fisica de São Carlos, Universidade de São Paulo, 13560-970 São Carlos, SP, Brazil

Received 5 March 1998; published in the issue dated 15 July 1998

Interface vibrational modes localized at the apexes of pyramidal InAs self-assembled quantum dots embedded in GaAs were observed by resonance Raman scattering. The comparison of the frequency positions of the interface modes with those obtained theoretically reveals a strong influence of the strain. The strain calculated for the InAs/GaAs dots satisfactorily explains the strain-induced frequency shifts obtained for the interface modes. It is important to notice that the interface modes observed in this study can be found in any corrugated interfaces containing tips and cusps where they can be localized.

© 1998 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.58.R1770
DOI:
10.1103/PhysRevB.58.R1770
PACS:
78.30.Fs, 63.20.Pw, 78.66.Fd
 
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