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Phys. Rev. B 58, R1734–R1737 (1998)

Silicon interband transitions observed at Si(100)-SiO2 interfaces

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G. Erley* and W. Daum
Institut für Grenzflächenforschung und Vakuumphysik, Forschungszentrum Jülich, D-52425 Jülich, Germany

Received 23 March 1998; published in the issue dated 15 July 1998

We report on a type of Si interband transitions at Si(100)-SiO2 interfaces that has no equivalent in the bulk of crystalline silicon. These transitions, leading to strong resonances in optical second-harmonic-generation spectra with energies of 3.6–3.8 eV, are energetically located between the E1 and E2 critical points of bulk Si. We assign these transitions to Si atoms without Td lattice symmetry at the boundary between crystalline Si and the SiOx transition region. We also report on a strong blueshift of the E2 transitions at the interface.

© 1998 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.58.R1734
DOI:
10.1103/PhysRevB.58.R1734
PACS:
73.20.-r, 42.65.An, 73.40.Qv

*Present address: Dept. of Chemistry, University of California, Irvine, CA 92697-2025.

 
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