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Phys. Rev. B 58, R14681–R14684 (1998)

Finite-size effects in bismuth nanowires

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Kai Liu and C. L. Chien
Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218

P. C. Searson
Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, Maryland 21218

Received 18 September 1998; published in the issue dated 1 December 1998

Arrays of semimetallic Bi nanowires, fabricated by electrodeposition, exhibit strong finite-size effects in transport properties as the carrier mean-free path is limited by the wire dimensions. We have observed a resistivity enhancement, a very large positive magnetoresistance, and a resistance maximum that depends on the strength and orientation of the magnetic field and the nanowire diameter. These results demonstrate electrodeposited Bi nanowires as a new medium for studying the intricate physics in Bi nanostructures.

© 1998 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.58.R14681
DOI:
10.1103/PhysRevB.58.R14681
PACS:
68.65.+g, 72.15.Lh, 72.20.My
 
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