Phys. Rev. B 58, R13423–R13425 (1998)

Direct measurement of field effects on surface diffusion

Abstract

References

Citing Articles (15)

Download: PDF (139 kB) Buy this article Export: BibTeX or EndNote (RIS)

Joseph M. Carpinelli and B. S. Swartzentruber
Surface and Interface Science, MS-1413, Sandia National Laboratory, Albuquerque, New Mexico 87185-1413

Received 10 August 1998; published in the issue dated 15 November 1998

We present here a method for quantitatively determining tip effects on surface diffusion during a scanning tunneling microscopy experiment. Using the technique of atom tracking, we measure the bias voltage and tunnel current dependencies of adsorbed Si dimer dynamics on Si(001). Throughout the range of typical tunneling conditions, the activation barrier for diffusion varies by less than 3%. We also find a striking difference between the electric-field effects on dimer diffusion and rotation, indicating the importance of transition states for this system.

URL:

http://link.aps.org/doi/10.1103/PhysRevB.58.R13423

DOI:

10.1103/PhysRevB.58.R13423

PACS:

68.35.Fx, 61.16.Ch, 66.30.Qa

About | Terms and Conditions | Subscriptions | Search | Help

Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.

Citation Search:

Phys. Rev. B 58, R13423–R13425 (1998)

Direct measurement of field effects on surface diffusion