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Phys. Rev. B 58, 8566–8573 (1998)

Exchange anisotropy in epitaxial and polycrystalline NiO/NiFe bilayers

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R. P. Michel* and A. Chaiken
Materials Science and Technology Division, Lawrence Livermore National Laboratory, Livermore, California 94551

C. T. Wang
Department of Materials Science and Engineering, Stanford University, Palo Alto, California 94305

L. E. Johnson
Materials Science and Technology Division, Lawrence Livermore National Laboratory, Livermore, California 94551

Received 16 January 1997; revised 3 March 1998; published in the issue dated 1 October 1998

(001)-oriented NiO/NiFe bilayers were grown on single crystal MgO (001) substrates by ion beam sputtering in order to determine the effect that the crystalline orientation of the NiO antiferromagnetic layer has on the magnetization curve of the NiFe ferromagnetic layer. The simplest model predicts no exchange anisotropy for the (001)-oriented NiO surface, which in its bulk termination is magnetically compensated. Nonetheless exchange anisotropy is present in the epitaxial films, although it is approximately half as large as in polycrystalline films that were grown simultaneously. The surface anisotropy in the epitaxial films is found to contain cubic and unidirectional components, while that in the polycrystalline film is best described by a uniaxial plus unidirectional anisotropy. Experiments indicate that differences in exchange field and coercivity between polycrystalline and epitaxial NiFe/NiO bilayers couples arise due to variations in induced surface anisotropy. Implications of these observations for models of induced exchange anisotropy in NiO/NiFe bilayer couples will be discussed.

© 1998 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.58.8566
DOI:
10.1103/PhysRevB.58.8566
PACS:
75.50.Ee, 81.10.Aj, 75.30.Et, 85.70.Kh

*Now at Seagate Technology, 7801 Computer Avenue South, Minneapolis, MN 55435. Electronic address: Richard_P_Michel@notes.seagate.com.

Now at Thin Film Department, Mailstop 2U-20, Hewlett Packard, 1501 Page Mill Road, Palo Alto, CA 94304. Electronic address: chaiken@hpl.hp.com.