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Phys. Rev. B 57, 12964–12967 (1998)

Theory of the field-effect mobility in amorphous organic transistors

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M. C. J. M. Vissenberg*
Philips Research Laboratories, 5656 AA Eindhoven, The Netherlands
Instituut–Lorentz, University of Leiden, 2300 RA Leiden, The Netherlands

M. Matters
Philips Research Laboratories, 5656 AA Eindhoven, The Netherlands

Received 13 January 1998; published in the issue dated 15 May 1998

The field-effect mobility in an organic thin-film transistor is studied theoretically. From a percolation model of hopping between localized states and a transistor model an analytic expression for the field-effect mobility is obtained. The theory is applied to describe the experiments by Brown et al. [Synth. Met. 88, 37 (1997)] on solution-processed amorphous organic transistors, made from a polymer (polythienylene vinylene) and from a small molecule (pentacene). Good agreement is obtained, with respect to both the gate voltage and the temperature dependence of the mobility.

© 1998 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.57.12964
DOI:
10.1103/PhysRevB.57.12964
PACS:
72.80.Le, 85.30.Tv

*Electronic address: vissenbe@natlab.research.philips.com

Electronic address: matters@natlab.research.philips.com