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Phys. Rev. B 57, 11923–11926 (1998)

Edge-driven transition in the surface structure of nanoscale silicon

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Sohrab Ismail-Beigi and Tomás Arias
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

Received 26 January 1998; published in the issue dated 15 May 1998

We present an ab initio exploration of the phenomena that might become important for free-standing structures of silicon as they are realized on the nanoscale. We find that not only surface effects, but also edge effects are important considerations in structures of dimensions 3 nm. Specifically, for long nanoscale silicon bars, we find two competing low-energy reconstructions with a transition from one to the other as the cross section of the bar decreases. We predict that this size-dependent phase transition has a signature in the electronic structure of the bar but little effect on elastic properties.

© 1998 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.57.11923
DOI:
10.1103/PhysRevB.57.11923
PACS:
68.35.Bs, 68.35.Rh