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Phys. Rev. B 57, 10248–10251 (1998)

Hall effect of the colossal magnetoresistance manganite La1-xCaxMnO3

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P. Matl, N. P. Ong, and Y. F. Yan*
Joseph Henry Laboratories of Physics, Princeton University, Princeton, New Jersey 08544

Y. Q. Li, D. Studebaker, T. Baum, and G. Doubinina
Advanced Technology Materials Inc., 7 Commerce Drive, Danbury, Connecticut 06810

Received 18 December 1997; published in the issue dated 1 May 1998

The Hall resistivity ρH and magnetoresistance of La1-xCaxMnO3 (Tc=265 K) have been measured at temperatures to 360 K in fields H to 14 T. By comparing ρH with the magnetization M, we have extracted the anomalous coefficient Rs. We uncover an interesting relationship: Rs is proportional to the zero-field resistivity from 200 to 360 K. Above Tc, the Hall angle tanθHM. Further, the effective Hall mobility is H independent over a wide range of H. We contrast these scaling relations with the Hall effect in typical ferromagnets.

© 1998 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.57.10248
DOI:
10.1103/PhysRevB.57.10248
PACS:
72.15.Gd, 75.70.Pa, 73.50.Jt

*Present address: Lucent Technologies, VLSI Technologies Department, 9333 South John Young Pkwy, Orlando, FL 32819.

Present address: NZ Applied Technologies, 150 C New Boston Street, Woburn, MA 01801.