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Phys. Rev. B 57, R9439–R9442 (1998)

Polariton effects on first-order Raman scattering in II-VI microcavities

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A. Fainstein
Centro Atómico Bariloche, Comisión Nacional de Energía Atómica, 8400 S. C. de Bariloche, R. N., Argentina

B. Jusserand
France Telecom/CNET/PAB-Laboratoire de Bagneux, Boîte Postale 107, 92225 Bagneux Cedex, France

R. André
Laboratoire de Spectrométrie Physique, Université Joseph Fourier-Grenoble 1, CNRS (UMR 55 88), Boîte Postale 87, F-38402 St. Martin d’Hères Cedex, France

Received 5 January 1998; published in the issue dated 15 April 1998

The polariton modes of a II-VI semiconductor quantum-well-embedded planar microcavity are studied by resonant Raman scattering as a function of cavity-exciton detuning. A maximum in the Raman efficiency is observed at the mode anticrossing, with minima in the pure photon and exciton limits. The results are compared with an optically nonconfined structure and discussed within the framework of existing theories of polariton-mediated Raman scattering, adapted to optically confined structures. It is shown that polariton effects are apparent in planar microcavities due to kz quantization and a peculiar polariton density-of-states cancellation in the scattering efficiency. The detuning dependence of the Raman efficiency reflects the varying photon and exciton strengths of the coupled-mode wave function, unambiguously revealing the involvement of cavity polaritons as intermediary states in the scattering process.

© 1998 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.57.R9439
DOI:
10.1103/PhysRevB.57.R9439
PACS:
78.30.Fs, 42.50.-p, 71.36.+c, 78.66.Fd