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APS » Journals » Phys. Rev. B » Volume 57 » Issue 16
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Phys. Rev. B 57, R9435–R9438 (1998)

Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells

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Jin Seo Im*, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter
4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany

Received 15 December 1997; published in the issue dated 15 April 1998

We demonstrate a dramatic reduction of the oscillator strength in GaN/AlxGa1-xN quantum wells due to piezoelectric fields. Our study using time-resolved photoluminescence spectroscopy reveals a strong increase of the luminescence decay time of the dominating transition with increasing well width by several orders of magnitude in parallel to a redshift of the emission peaks. The experimental results are consistently explained by a quantitative model based on the piezoelectric fields in strained wurtzite quantum wells. We estimate the piezoelectric constant of GaN to d31=-0.9×10-10 cm/V.

© 1998 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.57.R9435
DOI:
10.1103/PhysRevB.57.R9435
PACS:
77.65.Ly, 73.20.Dx, 78.47.+p, 78.55.Cr

*Electronic address: j.s.im@physik.uni-stuttgart.de

 
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