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APS » Journals » Phys. Rev. B » Volume 57 » Issue 16
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Phys. Rev. B 57, R9431–R9434 (1998)

Al/ZnSe(100) Schottky-barrier height versus initial ZnSe surface reconstruction

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M. Lazzarino, G. Scarel, S. Rubini, G. Bratina, L. Sorba*, and A. Franciosi
Laboratorio Nazionale TASC-INFM, Padriciano 99, I-34012 Trieste, Italy
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455

C. Berthod, N. Binggeli, and A. Baldereschi
Institut de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

Received 22 September 1997; published in the issue dated 15 April 1998

Al/ZnSe(100) Schottky barriers fabricated on c(2×2), 2×1, and 1×1 reconstructed surfaces were studied by means of photoemission spectroscopy and first-principles calculations. Relatively similar values of the Schottky barriers were found for interfaces fabricated on Zn-stabilized c(2×2) and Se-dimerized 2×1surfaces, while substantially lower values of the p-type barriers were predicted theoretically and observed experimentally for junctions grown on the Se-rich 1×1 surface.

© 1998 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.57.R9431
DOI:
10.1103/PhysRevB.57.R9431
PACS:
73.40.Ns, 73.30.+y, 79.60.Jv

*Also at Istituto ICMAT del CNR, Montelibretti, Roma, Italy.

 
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