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Phys. Rev. B 57, 9945–9949 (1998)

Observation of anomalously polarized photoluminescence in alternating nanocrystalline Si-amorphous Si multilayers

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X. L. Wu
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of China

G. G. Siu
Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong, China

S. Tong, Y. Gu, X. N. Liu, X. M. Bao, S. S. Jiang, and D. Feng
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of China

Received 11 June 1997; revised 14 November 1997; published in the issue dated 15 April 1998

Polarization properties of visible photoluminescence (PL) from alternating hydrogenated nanocrystalline silicon-amorphous silicon multilayers excited with linearly polarized light are examined. The PL is almost linearly polarized in the direction perpendicular to the polarization of excitation light, independent of the sample orientation. The degree of linear polarization δ negatively increases with decreasing emission energy, reaching a maximum of 90% on the low-energy side, and a different temperature dependence is observed. In addition, it was found that the sample with large structural inhomogeneity displays low PL efficiency and large δ. Since the obtained PL spectra show no crystallite size dependence of the peak energy and fine structures, we attribute these anomalous polarization properties to the radiative recombination of carriers confined in the interfacial region of optically anisotropic and randomly distributed Si:H nanocrystals.

© 1998 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.57.9945
DOI:
10.1103/PhysRevB.57.9945
PACS:
78.55.Hx, 78.66.Db