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Phys. Rev. B 57, R6803–R6806 (1998)

Spontaneous formation of an ordered c(4×2)-(2×1) domain pattern on Ge(001)

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H. J. W. Zandvliet
Department of Applied Physics and Centre of Materials Research, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands

B. S. Swartzentruber
Sandia National Laboratories, Albuquerque, New Mexico 87185-1413

W. Wulfhekel
Department of Applied Physics and Centre of Materials Research, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
IGV Forschungszentrum Jülich, 52425 Jülich, Germany

B. J. Hattink and Bene Poelsema
Department of Applied Physics and Centre of Materials Research, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands

Received 5 January 1998; published in the issue dated 15 March 1998

Scanning-tunneling-microscopy measurements of Ge(001) reveal the presence of an ordered domain pattern consisting of c(4×2) and (2×1) domains arranged in stripes with a width of several dimer row spacings, oriented along the dimer rows. We suggest that the existence of a soft domain wall between the domains combined with a difference in the stress component along the dimer bond for the (2×1) and c(4×2) domains, respectively, can conspire to produce such an ordered domain phase. A simple model based on strain relaxation explains the observed size of the domain pattern.

© 1998 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.57.R6803
DOI:
10.1103/PhysRevB.57.R6803
PACS:
68.35.Md, 61.16.Ch, 68.55.Jk
 
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