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Phys. Rev. B 57, R6799–R6802 (1998)

Reinvestigation of the Ni/Si interface: Spectromicroscopic evidence for multiple silicide phases

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L. Gregoratti, S. Günther, J. Kovac*, L. Casalis, M. Marsi, and M. Kiskinova
Sincrotrone Trieste, Area Science Park, I-34012 Trieste, Italy

Received 8 December 1997; published in the issue dated 15 March 1998

Using photoelectron spectromicroscopy we identified the chemical composition of several phases on a morphologically complex interface formed after segregation of dissolved Ni onto the Si(111) surface. Unexpectedly, coexistence of two types of micrometer-sized silicide islands with composition and electronic structure close to NiSi2 and NiSi phases was found. This finding revises some of the previous schemes about the evolution of the Ni/Si(111) system at high temperatures, which were based exclusively on structural analyses. A formation mechanism supposing anisotropy of the nucleation barrier for disilicide formation is suggested in order to explain the presence of NiSi islands and the preferred 〈110〉 orientation of the NiSi2 islands.

© 1998 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.57.R6799
DOI:
10.1103/PhysRevB.57.R6799
PACS:
68.55.Jk, 68.55.Nq, 82.80.Pv, 82.65.Yh

*Present address: Institute of Surface Engineering and Optoelectronics, Teslova 30, Ljubljana, Slovenia.