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APS » Journals » Phys. Rev. B » Volume 57 » Issue 11
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Phys. Rev. B 57, 6286–6289 (1998)

Thomas-Fermi approximation in p-type δ-doped quantum wells of GaAs and Si

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L. M. Gaggero-Sager*
Escuela de Física, Universidad Autónoma de Zacatecas, Zacatecas 98068, ZAC, Mexico

M. E. Mora-Ramos
Centro de Investigaciones en Optica, Unidad Aguascalientes, CP 20000 Aguascalientes, AGS, Mexico

D. A. Contreras-Solorio
Escuela de Física, Universidad Autónoma de Zacatecas, Zacatecas 98068, ZAC, Mexico

Received 9 July 1997; published in the issue dated 15 March 1998

Thomas-Fermi calculations of the hole subband structure in p-type δ-doped Si and GaAs quantum wells are carried out for different values of impurity concentration. Results are compared with previous self-consistent calculations and with some experimental reports, and very good agreement is found. In particular, the result of hole ground level from this model is exactly equal to the value reported for the experimental system with the smallest impurity spreading that has been achieved.

© 1998 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.57.6286
DOI:
10.1103/PhysRevB.57.6286
PACS:
73.30.+y, 73.61.-r

*Author to whom correspondence should be addressed. Electronic address: lgaggero@cantera.reduaz.mx

 
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