Phys. Rev. B 56, 15151–15156 (1997)Polariton effects in reflectance and emission spectra of homoepitaxial GaNReceived 10 April 1997; revised 10 July 1997; published in the issue dated 15 December 1997 Reflectance and photoluminescence spectra of exciton polaritons in GaN homoepitaxial layers, grown by metalorganic chemical-vapor deposition on GaN single crystals, are reported. Polariton modes involving excitons A, B, and C, which correspond to split valence bands of Γ9, Γ7, and Γ7 symmetries, are resolved. Energies of the transverse excitons are found to be, respectively: ETA=3.4767eV, ETB=3.4815eV and ETC=3.4986eV, at the temperature T=1.8K. The shape of the measured emission spectra depends upon donor concentration. This is explained in terms of interbranch polariton scattering. © 1997 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.56.15151
DOI:
10.1103/PhysRevB.56.15151
PACS:
71.20.Nr, 71.35.Cc, 71.36.+c
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