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Phys. Rev. B 56, 13742–13745 (1997)

Persistent photoconductivity in overdoped high-Tc thin films

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A. Hoffmann and Ivan K. Schuller
Physics Department 0319, University of California–San Diego, La Jolla, California 92093-0319

Z. F. Ren, J. Y. Lao, and J. H. Wang
Superconductive Materials Laboratory, Department of Chemistry and New York State Institute on Superconductivity, State University of New York at Buffalo, Buffalo, New York 14260-3000

Received 4 September 1997; published in the issue dated 1 December 1997

Overdoped Tl2Ba2CuO6+δ exhibits persistent photoconductivity at low temperatures. This effect has been observed before only in underdoped RBa2Cu3O7-δ (R=rare earth or yttrium). Contrary to RBa2Cu3O7-δ, Tl2Ba2CuO6+δ shows either a persistent increase or decrease of the carrier density with illumination, depending on doping and wavelength of the incident light. Thus it is possible to increase or decrease the superconducting transition temperature in Tl2Ba2CuO6+δ reversibly. These photoinduced changes can be explained by the existence of localized states in the charge reservoir layer.

© 1997 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.56.13742
DOI:
10.1103/PhysRevB.56.13742
PACS:
74.25.Fy, 73.50.Pz, 74.62.Yb, 74.72.Fq