Phys. Rev. B 56, 13380–13386 (1997)N K-edge x-ray-absorption study of heteroepitaxial GaN filmsReceived 10 February 1997; revised 14 August 1997; published in the issue dated 15 November 1997 The microstructure of GaN films grown by electron cyclotron resonance (ECR) molecular-beam epitaxy (MBE) and hydride vapor-phase epitaxy (HVPE) is studied using x-ray-absorption measurements at the N K edge. The local microstructure around the N atom is found to be distorted. The nearest neighbors of the N atom are four Ga atoms, N1 of which are located at a distance R1=1.95Å, which is expected, and N2 at a distance R2=R1+0.25Å. This distortion is more pronounced in the cubic ECR-MBE and the HVPE hexagonal samples where the ratio N2/N1 is equal to 1. In the rest of the samples the distortion is smaller and the ratio N2/N1 takes the value 0.33. Nitrogen deficiency is not detected in the second nearest-neighbor shell and the N atoms are found at the expected distance of 3.11 Å. © 1997 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.56.13380
DOI:
10.1103/PhysRevB.56.13380
PACS:
61.10.Ht, 78.70.Dm, 71.55.Eq
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