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Phys. Rev. B 56, 12196–12200 (1997)

Characterization of the bipolar mobility in polar materials by interband photoexcitation

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Pietro Bernasconi, Germano Montemezzani, Ivan Biaggio, and Peter Günter
Nonlinear Optics Laboratory, Institute of Quantum Electronics, Swiss Federal Institute of Technology, ETH Hönggerberg, CH-8093 Zürich, Switzerland

Received 29 April 1997; published in the issue dated 15 November 1997

We present a purely optical method to determine the effective electron-hole mobility ratio in electro-optic, photoconductive materials. Our technique combines observations of the dynamics of the interband photoconductivity with the determination of the anisotropy of the response time of a light induced space-charge electric field. In KNbO3 single crystals we measured a trap-limited mobility ratio μhc/μec=1.25±0.15 along the crystallographic c axis and μhb/μeb=2.0±0.4 along the b axis.

© 1997 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.56.12196
DOI:
10.1103/PhysRevB.56.12196
PACS:
71.38.+i, 72.20.Fr, 72.20.Jv, 72.40.+w