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APS » Journals » Phys. Rev. B » Volume 56 » Issue 16
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Phys. Rev. B 56, R10028–R10031 (1997)

Biexcitonic binding energies in the transition regime from three- to two-dimensional semiconductors

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A. Euteneuer, J. Möbius, R. Rettig, E. J. Mayer, M. Hofmann, W. Stolz, E. O. Göbel, and W. W. Rühle
Fachbereich Physik and Wissenschaftliches Zentrum für Materialwissenschaften, Philipps-Universität, D-35032 Marburg, Germany

Received 14 May 1997; revised 23 June 1997; published in the issue dated 15 October 1997

We study the dependence of the binding energies of excitonic molecules on the confinement in semiconductor quantum wells. A set of symmetrically strained (GaIn)As/Ga(PAs) quantum wells with different well depths and equal well widths is investigated with transient degenerate four-wave mixing. The ratio of biexcitonic to excitonic binding energy increases with stronger confinement. This experimental result is discussed in detail in the framework of recent theoretical predictions and experimental results.

© 1997 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.56.R10028
DOI:
10.1103/PhysRevB.56.R10028
PACS:
71.35.-y, 78.66.Fd, 73.20.Dx
 
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