Phys. Rev. B 56, R10024–R10027 (1997)Spontaneous polarization and piezoelectric constants of III-V nitrides
The spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids. The piezoelectric constants are found to be up to ten times larger than in conventional III-V and II-VI semiconductor compounds, and comparable to those of ZnO. Further properties at variance with those of conventional III-V compounds are the sign of the piezoelectric constants (positive as in II-VI compounds) and the very large spontaneous polarization. © 1997 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.56.R10024
DOI:
10.1103/PhysRevB.56.R10024
PACS:
77.65.Bn, 77.84.Bw, 77.22.Ej
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