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Phys. Rev. B 54, R5219–R5222 (1996)

Smooth-disorder effects in ballistic microstructures

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Klaus Richter*
Institut für Physik, Memminger Straβe 6, 86135, Augsburg, Germany

Denis Ullmo
Bell Laboratories, Lucent Technologies, ID-265, 600 Mountain Avenue, Murray Hill, New Jersey 07974-0636

Rodolfo A. Jalabert
Université Louis Pasteur, IPCMS-GEMME, 23 rue du Loess, 67037 Strasbourg Cedex, France

Received 8 March 1996; revised 17 May 1996; published in the issue dated 15 August 1996

We analyze the effect of weak residual disorder in microstructures defined on high-mobility heterojunctions, where the classical electron motion is ballistic. We parameterize the disorder by its correlation length ξ and the elastic mean free path l, which can be estimated from microscopic models. For the experimentally relevant case in which ξ is not negligible with respect to the size of the microstructure, we present a perturbative semiclassical approach demonstrating that the reduction due to disorder of a two-point Green-function observable, like the average magnetic susceptibility, is intrinsically different from the bulk (power law depending on l and ξ instead of an exponential damping governed uniquely by l). The very weak damping that we obtain supports the use of clean (no disorder) models for the ballistic regime. Our analytical findings are confirmed by exact numerical calculations.

© 1996 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.54.R5219
DOI:
10.1103/PhysRevB.54.R5219
PACS:

*Present address: Max-Planck-Institut für Physik komplexer Systeme, Bayreuther Strasse 40, 01187 Dresden, Federal Republic of Germany.

Permanent address: Division de Physique Théorique, IPN, 91406 Orsay Cedex, France.