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Phys. Rev. B 54, 2114–2120 (1996)

Reaction of I2 with the (001) surfaces of GaAs, InAs, and InSb. II. Ordering of the iodine overlayer

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P. R. Varekamp
Department of Physics, Materials Physics, Royal Institute of Technology S-100 44 Stockholm, Sweden

M. C. Håkansson
Department of Synchrotron Radiation Research, Institute of Physics, Lund University, Sölvegatan 14, S-223 62 Lund, Sweden

J. Kanski
Department of Physics, Chalmers University of Technology, S-412 96 Göteborg, Sweden

M. Björkqvist and M. Göthelid
Department of Physics, Materials Physics, Royal Institute of Technology S-100 44 Stockholm, Sweden

B. J. Kowalski
Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland

Z. Q. He
Department of Physics, Chalmers University of Technology, S-412 96 Göteborg, Sweden

D. K. Shuh and J. A. Yarmoff
Department of Physics, University of California, Riverside, California 92521
Materials Sciences Devision, Lawrence Berkeley National Laboratory, Berkeley, California 94720

U. O. Karlsson
Department of Physics, Materials Physics, Royal Institute of Technology S-100 44 Stockholm, Sweden

Received 11 October 1995; published in the issue dated 15 July 1996

The overlayer formed by the reaction of molecular iodine (I2) with GaAs(001), InAs(001), and InSb(001) is investigated with synchrotron soft x-ray photoelectron spectroscopy (SXPS) and scanning tunneling microscopy (STM). Two components, separated by about 0.5 eV, are present in all of the I 4d SXPS spectra. At very low iodine coverages, the high binding energy (BE) component dominates. When the iodine coverage saturates, however, the two components have nearly equal intensities. In contrast to GaAs and InAs, exposure of InSb(001)-c(8×2) to additional I2 results in a further increase of the relative intensity of the low-BE component. STM images of I2-covered InSb(001)-c(8×2) directly reveal the ordering in the overlayer. Islands are visible for submonolayer coverages, suggesting that adsorption occurs via a mobile precursor state. STM images collected from fully covered surfaces display two distinct types of atomiclike features. The predominant feature occupies a 1×1 unit cell with the same spacing as bulk-terminated InSb(001). The other feature has a coverage of ∼1/3 ML and is arranged in pairs oriented along the [110] azimuth. © 1996 The American Physical Society.

© 1996 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.54.2114
DOI:
10.1103/PhysRevB.54.2114
PACS:
82.65.My, 81.65.-b, 82.65.Dp, 68.35.Bs
 
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