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Phys. Rev. B 54, 2101–2113 (1996)

Reaction of I2 with the (001) surfaces of GaAs, InAs, and InSb. I. Chemical interaction with the substrate

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P. R. Varekamp
Department of Physics, Materials Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden

M. C. Håkansson
Department of Synchrotron Radiation Research, Institute of Physics, Lund University, Sölvegaten 14, S-223 62 Lund, Sweden

J. Kanski
Department of Physics, Chalmers University of Technology, S-412 96 Göteborg, Sweden

D. K. Shuh
Department of Physics, University of California, Riverside, California 92521
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

M. Björkqvist and M. Gothelid
Department of Physics, Materials Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden

W. C. Simpson
Department of Physics, University of California, Riverside, California 92521
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

U. O. Karlsson
Department of Physics, Materials Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden

J. A. Yarmoff
Department of Physics, University of California, Riverside, California 92521
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

Received 11 October 1995; published in the issue dated 15 July 1996

InAs(001)-c(8×2), InSb(001)-c(8×2), and several reconstructions of GaAs(001) are exposed at room temperature to iodine molecules (I2). Low-energy electron diffraction (LEED) and synchrotron soft x-ray photoelectron spectroscopy (SXPS) are employed to study the surfaces as a function of I2 dose and sample anneal. In the exposure range studied, GaAs and InAs become saturated with I2, resulting in removal of the clean surface reconstruction and the formation of a very strong 1×1 LEED pattern. Iodine bonds primarily to the dominant elemental species present on the clean surface, whether it is a group-III or -V element. The InSb(001)-c(8×2) reconstruction is also removed by I2 adsorption, and a strong 1×1 LEED pattern is formed. SXPS data, in conjunction with scanning tunneling microscopy images, however, reveal that InSb(001)-c(8×2) does not saturate at room temperature, but is instead etched with a preferential loss of In. Heating the iodine-covered group-III-rich InAs(001)-c(8×2) and InSb(001)-c(8×2) surfaces causes removal of the iodine overlayer and transformation to a group-V-rich reconstruction. When the iodine-covered As-rich GaAs(001)-c(2×8) surface is heated to remove iodine, however, the c(2×8) reconstruction is simply regenerated. © 1996 The American Physical Society.

© 1996 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.54.2101
DOI:
10.1103/PhysRevB.54.2101
PACS:
82.65.My, 81.65.-b, 82.65.Dp, 73.61.Ey
 
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