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APS » Journals » Phys. Rev. B » Volume 54 » Issue 24
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Phys. Rev. B 54, 17591–17595 (1996)

Formation of bound excitons by photoexcited carriers in p-type GaAs revealed by picosecond luminescence spectroscopy

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Rajesh Kumar, A. S. Vengurlekar, and S. S. Prabhu*
Tata Institute of Fundamental Research, Bombay 400005, India

Silvano De Franceschi and Fabio Beltram†
Scuola Normale Superiore and Istituto Nazionale per la Fisica della Materia, I-56126 Pisa, Italy

See Also: Erratum

Received 12 July 1996; revised 3 September 1996; published in the issue dated 15 December 1996

We report on the time evolution of photoluminescence (PL) spectra in molecular-beam-epitaxy grown p-type GaAs (p=5×1016 cm-3), following electron-hole pair excitation by picosecond laser pulses at densities of about 6×1016 cm-3. We perform both upconversion (UC) and photoexcitation-correlation (PEC) PL measurements for delays up to 1 ns. The UC and PEC PL results imply significant formation of bound excitons by electron-hole pairs in less than 1 ns.

© 1996 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.54.17591
DOI:
10.1103/PhysRevB.54.17591
PACS:

*Present address: Dept. of Physics, Emory University, Atlanta, GA 30322.

†Also at Laboratorio TASC dell'Istituto Nazionale per la Fisica della Materia, Trieste, Italy.

See Also

Erratum: Erratum: Formation of bound excitons by photoexcited carriers in p-type GaAs revealed by picosecond luminescence spectroscopy [Phys. Rev. B 54, 17591 (1996)], Phys. Rev. B 55, 13322 (1997).

 
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