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Phys. Rev. B 54, 14914–14917 (1996)

Single-hole dispersion relation for the real CuO2 plane

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V. I. Belinicher, A. L. Chernyshev, and V. A. Shubin
Institute of Semiconductor Physics, 630090, Novosibirsk, Russia

Received 24 May 1996; revised 12 August 1996; published in the issue dated 1 December 1996

Dispersion relation for the CuO2 hole is calculated based on the generalized t-t-J model, recently derived from the three-band one. Numerical ranges for all model parameters, t/J=2.4-2.7, t/t=0.0 to -0.25, t′′/t=0.1-0.15, and three-site terms 2tNtSJ/4 have been strongly justified previously. Physical reasons for their values are also discussed. A self-consistent Born approximation is used for the calculation of the hole dispersion. Good agreement between calculated Ek and one obtained from the angle-resolved photoemission experiments is found. A possible explanation of the broad peaks in the experimental energy distribution curves at the top of the hole band is presented.

© 1996 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.54.14914
DOI:
10.1103/PhysRevB.54.14914