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Phys. Rev. B 54, 12421–12426 (1996)

Flux jumping in thin films

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R. G. Mints
School of Physics and Astronomy, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 69978, Israel

E. H. Brandt
Institut für Physik, Max-Planck-Institut für Metallforschung, W-7000 Stuttgart 80, Germany

Received 15 May 1996; published in the issue dated 1 November 1996

The thermomagnetic flux-jump instability of the Bean critical state is considered, which may occur during flux penetration in thin films of type-II superconductors in a perpendicular magnetic field. We calculate the applied field Bj at which this instability occurs and its dependence on the ramp rate Ḃa, on the nonlinear current-voltage curve, and on the thermal resistance between the film and the substrate. As examples we consider the thermomagnetic flux-jump instability at the straight edge of a superconducting film and of the same edge containing a small indentation of semicircular shape. The presence of a small indentation drastically reduces the field or ramp rate at which the thermomagnetic instability occurs. © 1996 The American Physical Society.

© 1996 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.54.12421
DOI:
10.1103/PhysRevB.54.12421
PACS:
74.60.Ec, 74.60.Ge