Phys. Rev. B 54, 8116–8121 (1996)Electric field effects on excitons in gallium nitrideReceived 21 March 1996; published in the issue dated 15 September 1996 Electric-field effects on Wannier exciton are observed in GaN thin films. Using both absorption and photocurrent measurements, we have studied the excitonic Franz-Keldysh effect in thin epitaxial GaN films at temperatures between 80 and 300 K. We have measured the Stark shift, quenching, and broadening of the exciton peak with applied field. These results are compared with theoretical calculations from the literature. The physics of exciton ionization at varying temperatures is discussed, which explains the interplay between absorption and photocurrent. © 1996 The American Physical Society. © 1996 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.54.8116
DOI:
10.1103/PhysRevB.54.8116
PACS:
71.35.Cc, 78.20.Jq, 85.60.Gz
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