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Phys. Rev. B 53, 4814–4822 (1996)

Microscopic theory of optical gain in small semiconductor quantum dots

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Y. Z. Hu, H. Gie\Sen, and N. Peyghambarian
Optical Sciences Center, University of Arizona, Tucson, Arizona 85721

S. W. Koch
Fachbereich Physik und Zentrum für Materialwissenschaften, Philipps-Universität Marburg, Renthof 5, 35112 Marburg, Germany

Received 3 November 1995; published in the issue dated 15 February 1996

A microscopic theory is used to analyze optical gain in small semiconductor quantum dots. Based on a numerical matrix diagonalization method and subsequent solution of the optical Bloch equations, it is found that the quantum-dot gain is dominated by the stimulated transitions between biexciton and exciton states. The calculation shows that Coulomb interaction and valence-band mixing effects significantly influence the spectral and dynamic gain properties in strongly confined quantum dots. © 1996 The American Physical Society.

© 1996 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.53.4814
DOI:
10.1103/PhysRevB.53.4814
PACS:
42.55.Px, 71.35.-y, 73.20.Dx