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APS » Journals » Phys. Rev. B » Volume 53 » Issue 23
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Phys. Rev. B 53, 15477–15480 (1996)

Evidence for resonant electron capture and charge buildup in GaAs/AlxGa1-xAs quantum wells

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K. Muraki, A. Fujiwara, S. Fukatsu, and Y. Shiraki
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan

Y. Takahashi
Department of Electrical and Information Engineering, Yamagata University, Jonan, Yonezawa-shi, Yamagata 992, Japan

Received 27 December 1995; published in the issue dated 15 June 1996

Evidence for the resonant capture of electrons into quantum wells (QW’s) is demonstrated in the photoluminescence (PL) of GaAs/AlxGa1-xAs QW’s doped with Be. We find that the PL intensity ratio between the free-to-bound and excitonic transitions exhibits a strong oscillation as a function of the QW width bearing a striking resemblance to the theoretical prediction of the electron capture rate. It is shown that this PL behavior reflects the buildup of excess negative charge in the QW arising from the different capture efficiencies of electrons and holes. © 1996 The American Physical Society.

© 1996 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.53.15477
DOI:
10.1103/PhysRevB.53.15477
PACS:
78.66.Fd, 73.50.Gr, 78.55.Cr
 
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