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Phys. Rev. B 53, 13497–13502 (1996)

Electron-screening effects on the self-trapping of polarons

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G. Iadonisi
Dipartimento di Scienze Fisiche, Università di Napoli, I-80125 Napoli, Italy

G. Capone
Department of Physics, Antwerpen University, Antwerpen B-2610, Belgium

V. Cataudella and G. De Filippis
Dipartimento di Scienze Fisiche, Università di Napoli, I-80125 Napoli, Italy
Istituto Nazionale di Fisica della Materia, I-80125 Napoli, Italy

Received 21 November 1995; published in the issue dated 15 May 1996

In a polar semiconductor with a number of electrons or holes in the conduction or valence band, the interactions of an external charge with the longitudinal optical phonon are screened by the electron/hole density. Consequently the self-energy depends on the density. We show that, for any value of the Fröhlich electron-phonon coupling constant α, an electronic density n* can be found such that for density nn* the Lee polaron theory for the intermediate coupling (not self-trapped polarons) gives self-energies lower than those of the strong coupling (self-trapped polarons). This is due to the static and dynamical screening introduced by the plasmon field on the electron-phonon interaction. This result is confirmed by applying the path-integral technique to the problem and calculating both the self-energy and the renormalized mass. It is found that the density n* depends on α and η (the ratio of the high frequency dielectric constant to the static one). We note that typical charge carrier densities in high Tc superconductors are larger than n* for a wide range of value of α. This indicates that no self-trapped polarons might have a role in high Tc superconductors. © 1996 The American Physical Society.

© 1996 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.53.13497
DOI:
10.1103/PhysRevB.53.13497
PACS:
71.38.+i