Phys. Rev. B 53, 9587–9590 (1996)Photoluminescence of the two-dimensional hole gas in p-type δ-doped Si layersReceived 7 November 1995; published in the issue dated 15 April 1996 The radiative recombination processes related to the boron-δ-doping of Si layers are studied by means of photoluminescence (PL) spectroscopy. New broad asymmetric PL bands below the band edge excitonic emissions are shown to be characteristic for p-type modulation doping. By studying the dependence of the PL properties on structure parameters, such as doping level and growth temperature, and on the experimental conditions the mechanisms of the radiative recombination are analyzed. The PL revealed is argued to be related to the recombination between the two-dimensional hole gas confined in the doping-induced notch potential and photocreated electrons. © 1996 The American Physical Society. © 1996 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.53.9587
DOI:
10.1103/PhysRevB.53.9587
PACS:
73.20.Dx, 78.66.Db, 78.55.Hx
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