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Phys. Rev. B 53, 7731–7735 (1996)

Interstitial-oxygen-atom diffusion in MgO

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T. Brudevoll
Institute of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C, Denmark

E. A. Kotomin
Institute of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C, Denmark
Institute of Solid State Physics, University of Latvia, 8 Kengaraga Street, Riga LV-1063, Latvia

N. E. Christensen
Institute of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C, Denmark

Received 17 August 1995; published in the issue dated 15 March 1996

The atomic and electronic structure of the radiation-induced Frenkel defects Oi0 in MgO crystals is calculated. A full-potential linear-muffin-tin-orbital method combined with a 16-atom supercell is used for the optimization of the interstitial defect geometry. It is found that energetically the most favorable ground state Oi configuration is the (111) dumbbell centered at a regular oxygen site, whereas face-centered and cube-centered configurations are higher in energy by 1.45 eV and 3.57 eV, respectively. The (111) configuration is close in energy to the (110) configuration, which allows the dumbbell to rotate easily on a lattice site. In all these four cases the interstitial oxygen atom attracts considerable additional electron density from its nearest regular O2- ions, which makes it close to the Oi- ion rather than a neutral atom. The mechanism and the relevant activation energy for Oi diffusion are discussed in the light of available experimental data. © 1996 The American Physical Society.

© 1996 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.53.7731
DOI:
10.1103/PhysRevB.53.7731
PACS:
61.72.Ji, 61.80.Az, 66.30.Lw, 71.20.Nr