Phys. Rev. B 52, R17060–R17062 (1995)Misfit accommodation in heteroepitaxy by inclined stacking faults
For accommodation of the misfit between growing film and substrate an interesting mechanism is proposed. A periodic arrangement of inclined stacking faults may in certain cases provide an average lattice constant with much smaller misfit. It is shown that two experiments are well described with this mechanism. New experiments with KCl films on NaCl(100) [and old ones with Xe films on Si(111)7×7] require stacking faults in the film to describe the structure of the film as observed by spot profile analysis of low-energy electron diffraction. © 1995 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.52.R17060
DOI:
10.1103/PhysRevB.52.R17060
PACS:
61.14.Hg, 68.55.Jk, 68.55.Ln
|
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.