Phys. Rev. B 52, R17021–R17024 (1995)Resonant tunneling through two impurities in disordered barriers
In short lateral barriers of GaAs metal-semiconductor field-effect transistor, we have observed resonant tunneling through two impurities. Contrary to a steplike feature in I(V) due to an elementary one-impurity resonance, the two-impurity resonance manifests itself as a peak in the current. A magnetic field strongly suppresses the peak amplitude but has little effect on its width. We analyze the magnetic-field and temperature dependences of the two-impurity resonances. © 1995 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.52.R17021
DOI:
10.1103/PhysRevB.52.R17021
PACS:
73.20.Dx, 73.40.Gk
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