corner
corner
APS » Journals » Phys. Rev. B » Volume 52 » Issue 20
< Previous Article | Next Article >

Phys. Rev. B 52, 14688–14692 (1995)

Optically detected cyclotron-resonance studies of radiative processes in AlxGa1-xAs/GaAs high-electron-mobility structures

Download: PDF (189 kB) Buy this article Export: BibTeX or EndNote (RIS)

M. Godlewski
Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Al. Lotników 32/46, Poland

T. Lundström, Q. X. Zhao, W. M. Chen, P. O. Holtz, and B. Monemar
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden

T. G. Anderson
Department of Physics, Chalmers University of Technology, S-412 96 Göteborg, Sweden

Received 5 July 1995; published in the issue dated 15 November 1995

The nature of radiative recombination processes in high-electron-mobility AlxGa1-xAs/GaAs heterostructures is revealed from optically detected cyclotron resonance (ODCR) experiments. A mechanism of ODCR detection is observed and is related to the band bending across the GaAs active layer caused by impact ionization of shallow donors and acceptors by carriers heated at CR conditions. The results of the ODCR experiments are compared with those obtained from photoluminescence measurements under an applied gate voltage.

© 1995 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.52.14688
DOI:
10.1103/PhysRevB.52.14688
PACS:
78.66.Fd, 73.40.Kp, 73.20.Dx, 71.25.Jd
 
< Previous Article | Next Article >