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Phys. Rev. B 52, 10395–10404 (1995)

Measurements of magnetic screening lengths in superconducting Nb thin films by polarized neutron reflectometry

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Huai Zhang and J. W. Lynn
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, Maryland 20742
Reactor Radiation Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899

C. F. Majkrzak and S. K. Satija
Reactor Radiation Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899

J. H. Kang
Westinghouse Science and Technology Center, Pittsburgh, Pennsylvania 15235

X. D. Wu
Los Alamos National Laboratory, Los Alamos, New Mexico 87545

Received 16 January 1995; published in the issue dated 1 October 1995

Polarized neutron reflectivity measurements have been performed on two polycrystalline niobium films grown on silicon substrates. The samples were characterized with x-ray diffraction and reflection, electrical resistivity, and unpolarized neutron reflection measurements. For the film of 310 nm thickness, polarized neutron reflectivity measurements were carried out on both the Si side as well as the vacuum side, and we found that substantially higher quality data could be obtained from the Si side due to the enhanced contrast between the weak diamagnetic scattering and the nuclear scattering from the films. A large number of interference fringes from the waves reflected from the front and back surfaces of the film could be observed, attesting to the high quality and flatness of the sample. The vacuum-Nb interface had a surface roughness of σ∼3.4 nm, while the Nb-Si interface was nearly atomically smooth. We also carried out an experiment on a 300 nm-thick film of YBa2Cu3O7, but the roughness was so severe that no interference fringes could be observed, and reliable measurements of λ could not be obtained. The magnetic screening length for the Nb films was measured to be λ=110±2 nm for the sample with an electron mean free path l=10 nm, and λ=55±2 nm for the sample with l=35 nm. Taking into account the effects of crystalline defects and impurities, we obtain the intrinsic London penetration depth in superconducting Nb to be λL=43±8 nm at T=4.5 K. This result is in good agreement with that of Felcher et al.

© 1995 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.52.10395
DOI:
10.1103/PhysRevB.52.10395
PACS:
74.25.Ha, 61.12.-q, 74.60.-w