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Phys. Rev. B 52, 7806–7809 (1995)

Layered semiconductor GeS as a birefringent stratified medium

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R. A. Süleymanov, Ş. Ellialtíoǧlu, and B. G. Akínoǧlu
Physics Department, Middle East Technical University, 06531 Ankara, Turkey

Received 7 June 1995; published in the issue dated 15 September 1995

Transmission and reflection spectra of GeS single crystals of different thickness have been measured in a wide spectral range. The interference spectra have two periods in unpolarized light, one of which is the usual Fabry-Perot type while the other is due to birefringence. It is also shown that the reflection coefficient in the transparent region depends on the crystal thickness and reaches the value of about 0.75 for thick crystals (∼800 μm). The results obtained have been analyzed by using the 4×4 matrix method for multilayer optical systems. It is shown that GeS can be considered as a natural birefringent stratified medium.

© 1995 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.52.7806
DOI:
10.1103/PhysRevB.52.7806
PACS:
68.65.+g, 78.20.Fm