Phys. Rev. B 51, 17755–17757 (1995)Ab initio studies of GaN epitaxial growth on SiCReceived 4 January 1995; published in the issue dated 15 June 1995 Ab initio methods were used to investigate the initial stages of GaN epitaxial growth on (0001) 6H-SiC. Total energies of four types of interfaces were calculated. Polarity matching at the interface plays a fundamental role in determining the lower-energy structures, yielding strong binding for Si-N and C-Ga interfaces and very weak binding for Si-Ga and C-N. We therefore predict that Si-terminated substrates will produce ideally Ga-terminated films, whereas C-terminated substrates will produce ideally N-terminated films. This prediction suggests reinterpretation of recent experiments. © 1995 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.51.17755
DOI:
10.1103/PhysRevB.51.17755
PACS:
68.55.-a, 68.35.-p, 68.65.+g
|
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.