Phys. Rev. B 51, 17096–17099 (1995)Intermixing at Au-In interfaces as studied by photoelectron spectroscopyReceived 9 January 1995; published in the issue dated 15 June 1995 Interface reactions were observed by means of synchrotron-radiation-induced photoemission during the preparation of Au-In bilayers under UHV conditions at 77 K. These reactions lead to thin amorphous layers with tunable Au content, spanning the same range of compositions as found for vapor-quenched amorphous AuxIn100-x alloys. Most importantly, a significant decrease in the electronic density of states towards the Fermi level is observed in the intermixed phase, giving evidence for a strong mutual influence between the conduction electrons and the ionic structure during layer growth. © 1995 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.51.17096
DOI:
10.1103/PhysRevB.51.17096
PACS:
68.35.Fx, 79.60.Dp
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