corner
corner
APS » Journals » Phys. Rev. B » Volume 51 » Issue 11
< Previous Article | Next Article >

Phys. Rev. B 51, 7104–7111 (1995)

Dynamic model of epitaxial growth in ternary III-V semiconductor alloys

Download: PDF (318 kB) Buy this article Export: BibTeX or EndNote (RIS)

Bing-Lin Gu
Department of Physics, Tsinghua University, Beijing 100084, People’s Republic of China
Center of Theoretical Physics, Chinese Center of Advanced Science and Technology (World Laboratory), P.O. Box 8730, Beijing 100080, People’s Republic of China
Institute for Materials Research, Tohoku University, Sendai 980, Japan

Zhi-Feng Huang
Department of Physics, Tsinghua University, Beijing 100084, People’s Republic of China

Jun Ni
Department of Physics, Tsinghua, University, Beijing 100084, People’s Republic of China
Center of Theoretical Physics, Chinese Center of Advanced Science and Technology (World Laboratory), P.O. Box 8730, Beijing 100080, People’s Republic of China

Jing-Zhi Yu, Kaoru Ohno, and Yoshiyuki Kawazoe
Institute for Materials Research, Tohoku University, Sendai 980, Japan

Received 20 October 1994; published in the issue dated 15 March 1995

A concentration-wave method for several interpenetrating Bravais sublattices is presented by considering the intralayer and interlayer effective interactions and the difference between the surface layers and the deep layers of ternary III-V alloys. The most stable ordered structures of ternary III-V semiconductor alloys are deduced and a dynamic model for epitaxial growth is proposed. The present results are compared with the experimental observations, and the relations between interaction parameters are also given.

© 1995 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.51.7104
DOI:
10.1103/PhysRevB.51.7104
PACS:
61.50.Ks, 64.60.Cn, 81.30.Hd
 
< Previous Article | Next Article >