Phys. Rev. B 50, 17256–17266 (1994)Polaritons in semiconductor multiple-quantum-well structures with Förster-type interwell couplingReceived 18 July 1994; published in the issue dated 15 December 1994 When the barrier potential is high enough and/or its thickness large enough resonance tunneling becomes negligible in multiple-quantum-well structures. In this case a possible mechanism to connect the quantum wells is a Förster-type interwell coupling that originates from the long-range electron-hole exchange interaction. We theoretically investigate excitons in such a coupled multiple-quantum-well structure subject to an external light field, and show that the resulting polaritons behave in a qualitatively different way than those in uncoupled quantum-well structures. Of particular interest are interbranch polariton transitions and the redistribution of the radiative damping rate between different polariton branches. Numerical calculations are performed for a CdS-coupled double-quantum-well structure with dephasing by phonons taken into account. © 1994 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.50.17256
DOI:
10.1103/PhysRevB.50.17256
PACS:
71.35.+z, 71.36.+c, 73.40.Lq
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