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APS » Journals » Phys. Rev. B » Volume 50 » Issue 14
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Phys. Rev. B 50, 10063–10068 (1994)

Quantum corrections to the resistance of Mo/Si multilayers

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E. I. Buchstab
Department of Physics, Solid State Institute, Technion–Israel Institute of Technology, Haifa 32000, Israel

A. V. Butenko
Department of Physics, Bar-Ilan University, The Jack and Pearl Resnik Institute for Advanced Technology, Ramat-Gan 52100, Israel

N. Ya. Fogel and V. G. Cherkasova
Institute for Low Temperature Physics & Engineering, 47 Lenin Avenue, Kharkov 310164, Ukraine

R. L. Rosenbaum
School of Physics and Astronomy, Tel-Aviv University, Raymond and Beverly Sackler Faculty of Exact Sciences, Ramat-Aviv 69978, Israel

Received 10 May 1994; published in the issue dated 1 October 1994

We report on resistance and magnetoresistance measurements in multilayer Mo/Si samples at temperatures of 1.5–300 K and magnetic fields up to 6 T. The temperature dependence of the conductivity can be entirely described by quantum interference effects. The experimental results are compared with calculations of the quantum corrections due to weak localization, electron-electron interactions, and supeconducting fluctuations. The resistance shows a crossover from two-dimensional (2D) to 3D behavior when the temperature is increased.

© 1994 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.50.10063
DOI:
10.1103/PhysRevB.50.10063
PACS:
74.80.Dm, 73.20.Dx, 73.20.Fz
 
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