Phys. Rev. B 48, 3646–3653 (1993)Theoretical study of Raman modes in high-pressure phases of Si, Ge, and SnReceived 25 January 1993; published in the issue dated 1 August 1993 Results of an ab initio investigation of the pressure dependence of the Raman-active phonon modes in the β-Sn phase of Si, Ge, and Sn and the hexagonal-close-packed phase of Si are presented. The calculations are in very good agreement with experimental measurements. Both measurements and calculations show that the β-Sn-structure LO mode has a different pressure dependence for Ge than for Si. This difference between Si and Ge is discussed, and an explanation in terms of d electrons is given. © 1993 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.48.3646
DOI:
10.1103/PhysRevB.48.3646
PACS:
62.50.+p, 63.20.-e
|
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.