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APS » Journals » Phys. Rev. B » Volume 48 » Issue 24
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Phys. Rev. B 48, 18332–18335 (1993)

Formation of surface F centers on CaF2/Si(111)

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V. Chakarian, T. D. Durbin, P. R. Varekamp, and J. A. Yarmoff
Department of Physics, University of California, Riverside, California 92521
Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720

Received 3 September 1993; published in the issue dated 15 December 1993

The electronic transitions responsible for the formation of F centers at the surfaces of epitaxial CaF2 films on Si(111) have been identified via photon-stimulated desorption spectroscopy. Results for films ranging from submonolayer to bulk CaF2 indicate that excitations of the Ca 3p core level result in F+ desorption, and hence, in F-center formation, while excitations of the F 2s do not. It is proposed that this difference is due to inward nuclear motion that occurs prior to the deexcitation of the core hole.

© 1993 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.48.18332
DOI:
10.1103/PhysRevB.48.18332
PACS:
79.20.Ds, 61.72.Ji
 
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