Phys. Rev. B 48, 17867–17871 (1993)Formation of the Ho/CdSe(101¯0) interfaceReceived 26 July 1993; published in the issue dated 15 December 1993 Auger-electron spectroscopy, Auger depth-profile analysis, as well as photoelectron spectroscopy give clear evidence for several stages in the formation of the Ho/CdSe(101¯0) interface. For Ho coverages lower than a critical thickness of ≃1 Å, no reaction or intermixing of the components was found. In the range of intermediate coverages, 2 Å<θ<20 Å, Ho-Se chemical reactions are observed leading to a release of Cd. For higher Ho coverages, θ≥20 Å, this stage changes to a regime that is characterized by considerable Cd segregation and surface metallization. The presence of this metallic Cd layer prevents Ho diffusion and inhibits Ho-Se chemical reaction upon further deposition of Ho. © 1993 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.48.17867
DOI:
10.1103/PhysRevB.48.17867
PACS:
68.35.Fx, 73.30.+y, 79.60.-i
|
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.