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Phys. Rev. B 48, 15449–15452 (1993)

Confinement-enhanced biexciton binding energy in semiconductor quantum dots

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K. I. Kang, A. D. Kepner, S. V. Gaponenko, S. W. Koch, Y. Z. Hu, and N. Peyghambarian
Optical Sciences Center, University of Arizona, Tucson, Arizona 85721

Received 19 July 1993; published in the issue dated 15 November 1993

Experimental observation of the ground-state biexciton transition in CdSxSe1-x quantum dots in glass is presented in a three-beam experiment, involving a probe, a pump, and a saturating laser pulse. The observed quantum-dot biexciton ground state has a strongly enhanced binding energy compared to the bulk as theoretically predicted. The biexciton binding energy is measured as a function of quantum-dot size and the results are compared with calculations.

© 1993 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.48.15449
DOI:
10.1103/PhysRevB.48.15449
PACS:
71.35.+z