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Phys. Rev. B 48, 11732–11742 (1993)

Exciton-induced squeezed state of light in semiconductors

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Nguyen Ba An
International Center of Condensed Matter Physics, Universidade de Brasilia, Caixa Postal 04667, 70919-900 Brasilia-DF, Brazil

Received 2 July 1993; published in the issue dated 15 October 1993

In this paper a mechanism for the generation of a squeezed state of light is theoretically presented. Due to coupling with excitons and via exciton-exciton interaction, a light beam propagating within a finite-size semiconductor sample is shown to evolve into a squeezed state. Based on an effective bosonic Hamiltonian, which is obtained from the original fermionic one, a detailed derivation of the photon quadrature variances is presented and dependences of the photon squeezing on both the extrinsic and intrinsic parameters are analyzed.

© 1993 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.48.11732
DOI:
10.1103/PhysRevB.48.11732
PACS:
71.35.+z, 71.36.+c, 42.50.Dv